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參數(shù)資料
| 型號： | 934006640112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-6 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 109K |
| 代理商： | 934006640112 |
1996 Oct 02
2
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF346
FEATURES
High power gain
Easy power control
Good thermal stability
Gold metallization ensures excellent reliability.
APPLICATIONS
Linear amplifier applications in Television transmitters
and transposers.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 6-lead, SOT119 ange
package, with a ceramic cap. All leads are isolated from
the ange. A marking code, showing gate-source voltage
(VGS) information is provided for matched pair
applications. Refer to the General Section of Data
Handbook SC19a for further information.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING-SOT119
PIN
SYMBOL
DESCRIPTION
1
s
source
2
s
source
3
g
gate
4
d
drain
5
s
source
6
s
source
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
d
g
MAM268
2
4
6
5
3
1
QUICK REFERENCE DATA
RF performance in a linear amplier.
Note
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak synchronization level.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
ID
(A)
Th
(
°C)
PL
(W)
GP
(dB)
dim
(dB) (1)
Class-A
224.25
28
3
70
>24
>14
52
25
typ. 30
typ. 16.5
52
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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