參數(shù)資料
型號(hào)： 934006640112
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKGE-6
文件頁(yè)數(shù)： 13/16頁(yè)
文件大?。?/td> 109K
代理商： 934006640112
1996 Oct 02
6
Philips Semiconductors
Product specication
VHF power MOS transistor
BLF346
APPLICATION INFORMATION
RF performance in a linear amplier (common source class-A circuit).
Rth mb-h = 0.2 K/W; ZL = 1.1 + j0.2 unless otherwise specied.
Note
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak synchronization level.
Ruggedness in class-A operation
The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: VDS = 28 V; f = 225 MHz at rated output power.
MODE OF
OPERATION
f
(MHz)
VDS
(V)
ID
(A)
Th
(
°C)
Po sync
(W)
GP
(dB)
dim
(dB) (1)
Class-A
224.25
28
3
70
> 24
> 14
52
25
typ. 30
typ. 16.5
52
70
typ. 20
typ. 14.5
55
25
typ. 22
typ. 15
55
Fig.9
Intermodulation distortion as a function of
peak synchronized output power.
handbook, halfpage
0
10203040
50
70
55
MGG109
65
60
dim
(dB)
Po sync (W)
(1)
(2)
(1) Th =70 °C.
(2) Th =25 °C.
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