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參數(shù)資料
| 型號： | 934006620112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 934006620112 |
October 1992
4
Philips Semiconductors
Product specication
UHF push-pull power MOS transistor
BLF548
CHARACTERISTICS (per section)
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 40 mA
65
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
0.5
mA
IGSS
gate-source leakage current
±VGS = 20 V; VDS = 0
1
A
VGS(th)
gate-source threshold voltage
ID = 160 mA; VDS = 10 V
2
4V
gfs
forward transconductance
ID = 4.8 A; VDS = 10 V
2.4
3.5
S
RDS(on)
drain-source on-state resistance
ID = 4.8 A; VGS = 10 V
0.25
0.3
IDSX
on-state drain current
VGS = 15 V; VDS = 10 V
16
20
A
Cis
input capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
105
pF
Cos
output capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
90
pF
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
25
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values per section.
VDS = 10 V.
handbook, halfpage
0
1
2
3
1
2
3
4
101
102
110
TC
(mV/K)
ID (A)
MRA524
Fig.5
Drain current as a function of gate-source
voltage, typical values per section.
VDS = 10 V; Tj = 25 °C.
handbook, halfpage
0
5
10
15
20
25
0
4
8
12
16
MRA529
ID
(A)
VGS (V)
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