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參數(shù)資料
| 型號： | 934006620112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | 934006620112 |
October 1992
10
Philips Semiconductors
Product specication
UHF push-pull power MOS transistor
BLF548
Fig.13 Input impedance as a function of frequency
(series components), typical values per
section.
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section);
PL = 150 W (total device).
handbook, halfpage
0
1
2
3
4
50
150
250
350
450
550
f (MHz)
Zi
()
ri
xi
MRA528
Fig.14 Load impedance as a function of frequency
(series components), typical values per
section.
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section);
PL = 150 W (total device).
handbook, halfpage
0
1
2
3
4
5
6
50
150
250
350
450
550
f (MHz)
MRA530
ZL
()
RL
XL
Fig.15 Definition of MOS impedance.
handbook, halfpage
MBA379
Zi
ZL
Fig.16 Power gain as a function of frequency,
typical values per section.
Class-B operation; VDS = 28 V; IDQ = 160 mA (per section);
PL = 150 W (total device).
handbook, halfpage
0
10
15
20
25
30
50
150
250
350
450
550
5
f (MHz)
GP
(dB)
MRA526
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