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參數(shù)資料
| 型號(hào)： | 934003660115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, SMD, UPAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 934003660115 |
1999 Apr 08
3
Philips Semiconductors
Product specication
NPN Darlington transistors
BCV29; BCV49
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
96
K/W
Rth j-s
thermal resistance from junction to soldering point
16
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
BCV29
IE = 0; VCB =30V
100
nA
BCV49
IE = 0; VCB =60V
100
nA
IEBO
emitter cut-off current
IC = 0; VEB =10V
100
nA
hFE
DC current gain
VCE = 5 V; see Fig.2
BCV29
IC = 1 mA
4000
IC = 10 mA
10000
IC = 100 mA
20000
IC = 500 mA
4000
DC current gain
VCE = 5 V; see Fig.2
BCV49
IC = 1 mA
2000
IC = 10 mA
4000
IC = 100 mA
10000
IC = 500 mA
2000
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA
1V
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEon
base-emitter on-state voltage
IC = 10 mA; VCE =5V
1.4
V
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 100 MHz
220
MHz
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