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參數(shù)資料
| 型號： | 934003660115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, SMD, UPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 43K |
| 代理商： | 934003660115 |
1999 Apr 08
2
Philips Semiconductors
Product specication
NPN Darlington transistors
BCV29; BCV49
FEATURES
High current (max. 500 mA)
Low voltage (max. 60 V)
High DC current gain (min. 20000).
APPLICATIONS
Preamplifier input applications.
DESCRIPTION
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
TYPE NUMBER
MARKING CODE
BCV29
EF
BCV49
EG
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1
Simplified outline (SOT89) and symbol.
12
3
handbook, halfpage
MAM300
32
1
TR2
TR1
Bottom view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCV29
40
V
BCV49
80
V
VCES
collector-emitter voltage
VBE =0
BCV29
30
V
BCV49
60
V
VEBO
emitter-base voltage
open collector
10
V
IC
collector current (DC)
500
mA
ICM
peak collector current
1A
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.3
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
operating ambient temperature
65
+150
°C
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