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參數(shù)資料
| 型號： | 934002640215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大?。?/td> | 140K |
| 代理商： | 934002640215 |
1996 Aug 01
2
Philips Semiconductors
Product specication
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
FEATURES
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz.
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
DESCRIPTION
Depletion type field effect transistor in a plastic
microminiature SOT143 or SOT143R package with source
and substrate interconnected. The transistors are
protected against excessive input voltage surges by
integrated back-to-back diodes between gates and
source.
PINNING
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1
Simplified outline (SOT143)
and symbol; BF998.
Marking code: MOp.
handbook, halfpage
s,b
d
g
1
g
2
43
2
1
Top view
MAM039
handbook, halfpage
s,b
d
g
1
g
2
MAM040
34
1
2
Top view
Fig.2
Simplified outline (SOT143R)
and symbol; BF998R.
Marking code: MOp.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage
12
V
ID
drain current
30
mA
Ptot
total power dissipation
200
mW
yfs
forward transfer admittance
24
mS
Cig1-s
input capacitance at gate 1
2.1
pF
Crs
reverse transfer capacitance
f = 1 MHz
25
fF
F
noise gure
f = 800 MHz
1
dB
Tj
operating junction temperature
150
°C
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