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參數(shù)資料
| 型號： | 934002640215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 10/15頁 |
| 文件大小： | 140K |
| 代理商： | 934002640215 |
1996 Aug 01
4
Philips Semiconductors
Product specication
Silicon N-channel dual-gate MOS-FETs
BF998; BF998R
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a ceramic substrate, 8 mm
× 10 mm × 0.7 mm.
2. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specied.
Note
1. Measured under pulse condition.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VDS =8V; VG2-S = 4 V; ID = 10 mA.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air; BF998
note 1
460
K/W
note 2
500
K/W
Rth j-a
thermal resistance from junction to ambient in free air; BF998R note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
±V
(BR)G1-SS
gate 1-source breakdown voltage
VG2-S =VDS = 0; IG1-SS = ±10 mA
6
20
V
±V(BR)G2-SS gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-SS = ±10 mA
6
20
V
V(P)G1-S
gate 1-source cut-off voltage
VG2-S =4V; VDS =8V; ID =20 A
2.0
V
V(P)G2-S
gate 2-source cut-off voltage
VG1-S = 0; VDS =8V; ID =20 A
1.5
V
IDSS
drain-source current
VG2-S =4V; VDS =8V; VG1-S = 0; note 1
2
18
mA
±IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S = ±5V
50
nA
±IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S = ±5V
50
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
f = 1 kHz
21
24
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.1
2.5
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1.2
pF
Cos
output capacitance
f = 1 MHz
1.05
pF
Crs
reverse transfer capacitance
f = 1 MHz
25
fF
F
noise gure
f = 200 MHz; GS = 2 mS; BS =BSopt
0.6
dB
f = 800 MHz; GS = 3.3 mS; BS =BSopt
1.0
dB
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