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參數(shù)資料
| 型號： | 934002270115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 8/13頁 |
| 文件大小： | 100K |
| 代理商： | 934002270115 |
September 1995
4
Philips Semiconductors
Product specication
NPN 6 GHz wideband transistor
BFG94
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim = 60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 ; Tamb = 25 °C;
Vp = VO at dim = 60 dB; fp = 795.25 MHz;
Vq = VO 6 dB; Vr = VO 6 dB;
fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
3. IC = 45 mA; VCE = 10 V; RL = 75 ; Tamb = 25 °C;
Vq = VO = 280 mV;
fp = 250 MHz; fq = 560 MHz;
measured at f(p+q) = 810 MHz.
4. IC = 45 mA; VCE = 10 V; RL = 50 ;Tamb = 25 °C;
fp = 1000 MHz; fq = 1001 MHz;
measured at f(2pq) and f(2qp).
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
100
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V
45
90
IC = 45 mA; VCE = 10 V
100
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
0.9
2
pF
Ce
emitter capacitance
IC = ie = 0; VEB = 0.5 V; f = 1 MHz
2.9
4.5
pF
Cre
feedback capacitance
IC = ic = 0; VCE = 10 V; f = 1 MHz
0.5
0.8
pF
fT
transition frequency
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
4
GHz
IC = 30 mA; VCE = 5 V; f = 1 GHz;
Tamb = 25 °C
46
GHz
GUM
maximum unilateral power gain
(note1)
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
11.5
13.5
dB
F
minimum noise gure
Γ
s = Γopt; IC = 45 mA; VCE = 10 V;
f = 500 MHz
2.7
dB
Γs = Γopt; IC = 45 mA; VCE = 10 V;
f = 1 GHz
3
dB
VO
output voltage
note 2
500
mV
d2
second order intermodulation
distortion
note 3
51
dB
PL1
output power at 1 dB gain
compression
IC = 45 mA; VCE = 10 V; RL = 50 ;
Tamb = 25 °C; measured at f = 1 GHz
21.5
dBm
ITO
third order intercept point
note 4
34
dBm
G
UM
10
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
log
=
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