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參數(shù)資料
| 型號(hào)： | 934002270115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | 934002270115 |
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September 1995
2
Philips Semiconductors
Product specication
NPN 6 GHz wideband transistor
BFG94
FEATURES
High power gain
Low noise figure
Low intermodulation distortion
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope. It is primarily
intended for use in communication
and instrumentation systems.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
page
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
IC
DC collector current
60
mA
Ptot
total power dissipation
up to Ts = 140 °C (note 1)
700
mW
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
0.8
pF
fT
transition frequency
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
46
GHz
GUM
maximum unilateral power gain
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
11.5
13.5
dB
VO
output voltage
IC = 45 mA; VCE = 10 V;
dim = 60 dB; RL = 75 ;
f = 800 MHz; Tamb = 25 °C
500
mV
PL1
output power at 1 dB gain
compression
IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
21.5
dBm
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參數(shù)描述 |
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| 9340-16 | 制造商:Bourns Inc 功能描述: |
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