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參數(shù)資料
| 型號： | 934002210115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 71K |
| 代理商： | 934002210115 |
1995 Sep 12
3
Philips Semiconductors
Product specication
NPN 2 GHz wideband transistor
BFG16A
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction
to soldering point
up to Ts =110 °C; note 1
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown
voltage
open emitter; IC = 0.1 mA
25
V
V(BR)CEO
collector-emitter breakdown
voltage
open base; IC =10mA
18
V
V(BR)EBO
emitter-base breakdown voltage open collector; IE = 0.1 mA
3
V
ICBO
collector cut-off current
IE = 0; VCB =28V
20
A
hFE
DC current gain
IC = 150 mA; VCE =5V
25
80
Cc
collector capacitance
IE =ie = 0; VCB =10V; f=1MHz
2.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
10.0
pF
Cre
feedback capacitance
IC = 0; VCB =10V; f=1MHz
1.5
pF
fT
transition frequency
IC = 100 mA; VCE =10V;
f = 500 MHz; Tamb =25 °C
1.5
GHz
GUM
maximum unilateral power gain
note 1
IC = 100 mA; VCE =10V;
f = 500 MHz; Tamb =25 °C
10
dB
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
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