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參數(shù)資料
| 型號： | 934002210115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 934002210115 |
1995 Sep 12
2
Philips Semiconductors
Product specication
NPN 2 GHz wideband transistor
BFG16A
FEATURES
High power gain
Good thermal stability
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope.
It is primarily intended for use in
wideband amplifiers, aerial amplifiers
and vertical amplifiers in high speed
oscilloscopes.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
fpage
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
25
V
IC
DC collector current
150
mA
Ptot
total power dissipation
up to Ts =110 °C; note 1
1W
hFE
DC current gain
IC = 150 mA; VCE =5V; Tj =25 °C25
80
fT
transition frequency
IC = 100 mA; VCE =10V;
f = 500 MHz; Tamb =25 °C
1.5
GHz
GUM
maximum unilateral power gain
IC = 100 mA; VCE =10V;
f = 500 MHz; Tamb =25 °C
10
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
150
mA
Ptot
total power dissipation
up to Ts =110 °C; note 1
1W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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