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參數(shù)資料
| 型號(hào)： | 934001090112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 934001090112 |
2001 Oct 10
6
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF246B
APPLICATION INFORMATION
RF performance in CW operation in a push-pull, common source, class-B circuit. Th =25 °C; Rth mb-h = 0.25 K/W;
unless otherwise specied.
Ruggedness in class-B operation
The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: VDS = 28 V; f = 175 MHz at rated output power.
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
η
D
(%)
CW, class-B
175
28
2
× 50
60
>14
>55
typ. 19
typ. 65
Fig.9
Power gain and efficiency as a function of
load power; typical values per section.
Class-B operation; VDS = 28 V; IDQ =2 × 50 mA;
ZL = 4.6 + j5 ; f = 175 MHz.
handbook, halfpage
020
40
80
25
0
20
MGR744
60
15
10
5
100
0
80
60
40
20
Gp
η
D
Gp
(dB)
PL (W)
η
D
(%)
Fig.10 Load power as a function of input power;
typical values per section.
Class-B operation; VDS = 28 V; IDQ =2 × 50 mA;
ZL = 4.6 + j5 ; f = 175 MHz.
handbook, halfpage
0
2.5
100
0
20
MGR745
40
60
80
0.5
1.0
1.5
2.0
PIN (W)
PL
(W)
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