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參數(shù)資料
| 型號： | 934001090112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 93K |
| 代理商： | 934001090112 |
2001 Oct 10
3
Philips Semiconductors
Product specication
VHF push-pull power MOS transistor
BLF246B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor section unless otherwise specied
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±20
V
ID
drain current (DC)
8A
Ptot
total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded
130
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-mb
thermal resistance from junction to
mounting base
total device; both sections equally
loaded
1.35
K/W
Rth mb-h
thermal resistance from mounting base
to heatsink
total device; both sections equally
loaded
0.25
K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by RDSon.
(2) Tmb =25 °C.
Total device; both sections equally loaded.
handbook, halfpage
101
1
10
110
ID
(A)
VDS (V)
102
(1)
50
MRA932
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
0
40
80
160
120
40
0
80
MGR738
120
Th (°C)
Ptot
(W)
(2)
(1)
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