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參數(shù)資料
| 型號： | 933919930115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 95K |
| 代理商： | 933919930115 |
1995 Sep 12
3
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistor
BFG198
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL =75 ; Tamb =25 °C;
Vp =Vo at dim = 60 dB;
Vq =Vo 6 dB; fp = 445.25 MHz;
Vr =Vo 6 dB; fq = 453.25 MHz; fr = 455.25 MHz
measured at f(p+qr) = 443.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 8 V; RL =75 ; Tamb =25 °C;
Vp =Vo at dim = 60 dB; fp = 795.25 MHz;
Vq =Vo 6 dB; fq = 803.25 MHz;
Vr =Vo 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
4. IC = 50 mA; VCE = 8 V; Vo = 50 dBmV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts = 135 °C (note 1)
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =5V
100
nA
hFE
DC current gain
IC = 50 mA; VCE = 5 V
40
90
Cc
collector capacitance
IE =ie = 0; VCB = 8 V; f = 1 MHz
1.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
4
pF
Cre
feedback capacitance
IC = 0; VCE =8V; f=1MHz
0.8
pF
fT
transition frequency
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
8
GHz
GUM
maximum unilateral power
gain; note 1
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb =25 °C
18
dB
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb =25 °C
15
dB
Vo
output voltage
note 2
750
mV
note 3
700
mV
d2
second order
intermodulation distortion
note 4
55
dB
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
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