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參數(shù)資料
| 型號(hào)： | 933919930115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | 933919930115 |
1995 Sep 12
2
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistor
BFG198
DESCRIPTION
NPN planar epitaxial transistor in a
plastic SOT223 envelope, intended
for wideband amplifier applications.
The device features a high gain and
excellent output voltage capabilities.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
age
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts = 135 °C (note 1)
1W
hFE
DC current gain
IC = 50 mA; VCE =5V; Tj =25 °C40
90
fT
transition frequency
IC = 50 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
8
GHz
GUM
maximum unilateral power
gain
IC = 50 mA; VCE = 8 V; f = 500 MHz;
Tamb =25 °C
18
dB
IC = 50 mA; VCE = 8 V; f = 800 MHz;
Tamb =25 °C
15
dB
Vo
output voltage
dim = 60 dB; IC = 70 mA; VCE =8V;
RL =75 ; Tamb =25 °C;
f(p+qr) = 793.25 MHz
700
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts = 135 °C (note 1)
1W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
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