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參數(shù)資料
| 型號： | 933807250127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 933807250127 |
1999 Jun 11
2
Philips Semiconductors
Product specication
Silicon diffused power transistors
BUT18; BUT18A
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a TO-220AB package.
APPLICATIONS
Converters
Inverters
Switching regulators
Motor control systems.
PINNING
PIN
DESCRIPTION
1
base
2
collector; connected to
mounting base
3
emitter
Fig.1 Simplified outline (TO-220AB) and symbol.
dbook, halfpage
MBK106
12 3
3
2
1
MBB008
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VCESM
collector-emitter peak voltage
VBE =0
BUT18
850
V
BUT18A
1000
V
VCEO
collector-emitter voltage
open base
BUT18
400
V
BUT18A
450
V
VCEsat
collector-emitter saturation voltage
see Fig.7
1.5
V
ICsat
collector saturation current
4
A
IC
collector current (DC)
see Fig.2
6
A
ICM
collector current (peak value)
see Fig.2
12
A
Ptot
total power dissipation
Tmb ≤ 25 °C; see Fig.4
110
W
tf
fall time
resistive load; see Figs 10 and 11
0.8
s
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-mb
thermal resistance from junction to mounting base
1.15
K/W
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