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參數(shù)資料
| 型號： | 933807250127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 67K |
| 代理商： | 933807250127 |
1999 Jun 11
3
Philips Semiconductors
Product specication
Silicon diffused power transistors
BUT18; BUT18A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCESM
collector-emitter peak voltage
VBE =0
BUT18
850
V
BUT18A
1000
V
VCEO
collector-emitter voltage
open base
BUT18
400
V
BUT18A
450
V
ICsat
collector saturation current
4A
IC
collector current (DC)
see Fig.2
6A
ICM
collector current (peak value)
see Fig.2
12
A
IB
base current (DC)
3A
IBM
base current (peak value)
6A
Ptot
total power dissipation
Tmb ≤ 25 °C; see Fig.4
110
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEOsust
collector-emitter sustaining
voltage
IC = 0.1 A; IBoff = 0; L = 25 mH; see
Figs 5 and 6
BUT18
400
V
BUT18A
450
V
VCEsat
collector-emitter saturation voltage IC = 4 A; IB = 0.8 A; see Fig.7
1.5
V
VBEsat
base-emitter saturation voltage
IC = 4 A; IB = 0.8 A; see Fig.8
1.3
V
ICES
collector-emitter cut-off current
VCE =VCESMmax; VBE = 0; note 1
1mA
VCE =VCESMmax; VBE =0;
Tj = 125 °C; note 1
2mA
IEBO
emitter-base cut-off current
VEB =9V; IC =0
10
mA
hFE
DC current gain
VCE =5V; IC = 10 mA; see Fig.9
10
18
35
VCE =5V; IC = 1 A; see Fig.9
10
20
35
Switching times resistive load (see Figs 10 and 11)
ton
turn-on time
ICon = 4 A; IBon = IBoff = 800 mA
1
s
ts
storage time
ICon = 4 A; IBon = IBoff = 800 mA
4
s
tf
fall time
ICon = 4 A; IBon = IBoff = 800 mA
0.8
s
Switching times inductive load (see Figs 10 and 13)
ts
storage time
ICon = 4 A; IBon = 800 mA; VCL = 250 V
1.6
2.5
s
tf
fall time
ICon = 4 A; IBon = 800 mA; VCL = 250 V
150
400
ns
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