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參數(shù)資料
| 型號： | 933806990215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 933806990215 |
September 1995
3
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR106
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. IC = 30 mA; VCE = 6 V; RL =75 ;Tamb =25 °C;
f(p+q) = 810 MHz; Vo = 100 mV.
3. dim = 60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL =75 ;Tamb =25 °C; f(p+qr) = 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts =70 °C; note 1
210 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
100
nA
hFE
DC current gain
IC = 50 mA; VCE =9 V
25
80
fT
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb =25 °C
5
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
1.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
4.5
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
1.2
pF
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb =25 °C
11.5
dB
F
noise gure
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb =25 °C
3.5
dB
d2
second order intermodulation
distortion
note 2
50
dB
Vo
output voltage
note 3
350
mV
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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