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參數(shù)資料
| 型號(hào)： | 933806990215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 933806990215 |
September 1995
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN
DESCRIPTION
Code: R7p
1
base
2
emitter
3
collector
Fig.1 SOT23.
age
MSB003
Top view
12
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts =70 °C; note 1
500
mW
hFE
DC current gain
IC = 50 mA; VCE =9 V; Tamb =25 °C25
80
fT
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb =25 °C
5
GHz
GUM
maximum unilateral power gain
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb =25 °C
11.5
dB
Vo
output voltage
IC = 50 mA; VCE = 9 V; RL =75 ;
Tamb =25 °C; dim = 60 dB;
f(p+qr) = 793.25 MHz
350
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
3V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts =70 °C; note 1
500
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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