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參數(shù)資料
| 型號： | 933755380114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 933755380114 |
1999 Dec 24
5
Philips Semiconductors
Product specication
NPN microwave power transistor
RZ1214B65Y
Fig.3 Wideband test circuit for class-C operation at 1.2 to 1.4 GHz.
Dimensions in mm.
Substrate: Epsilam.
Thickness: 0.635 mm.
Permittivity:
ε
r = 10.
handbook, full pagewidth
MGK060
,,,,,,,
,,,,,,,,
,,,,,,,
,,,,,,
5.3
6.5
15
5.7
0.65
3
0.65
2.3
input
output
3.5
5
3
5
8.5
4.8
4
Fig.4 Input and optimum load impedances as functions of frequency; typical values.
Class-C operation; VCE = 50 V; PL = 65 W; Zo =5 ; tp = 150 s; δ= 5%.
handbook, full pagewidth
0.2
0.5
1
2
5
10
∞
0.2
0.5
1
2
5
10
0
+ j
– j
MBC985
z i
Z L
1.4
1.3
1.4
0.5
1
0.2
10
5
2
1.3
1.2 GHz
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