參數(shù)資料
型號(hào): 933755380114
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 5/10頁(yè)
文件大小: 91K
代理商: 933755380114
1999 Dec 24
4
Philips Semiconductors
Product specication
NPN microwave power transistor
RZ1214B65Y
THERMAL CHARACTERISTICS
Tj =75 °C unless otherwise specied.
Notes
1. See
“Mounting recommendations in the General part of associated Handbook”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
APPLICATION INFORMATION
The transistors are 100% tested under the following conditions.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
2.5
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
note 1
0.2
K/W
Zth j-h
thermal resistance from junction to heatsink
tp = 100 s; δ =10%;
notes 1 and 2
0.55
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 40 mA; IE =0
65
V
V(BR)CES
collector-emitter breakdown voltage
IC = 40 mA; RBE =0
60
V
ICBO
collector cut-off current
VCB = 50 V; IE =0
4mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC =0
0.4
mA
MODE OF
OPERATION
CONDITIONS
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(
)
Class-C
tp = 150 s; δ = 5%
1.2 to 1,4
50
typ.80; >70
typ.7.8; >7
typ.40; >35
see Fig 4
tp = 300 s; δ = 10% 1.2 to 1,4
50
typ.80;
typ.7
typ.30
see Fig 4
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