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參數(shù)資料
| 型號(hào)： | 933754980215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, 4 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | 933754980215 |
April 1991
3
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF996S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
20
V
ID
drain current (DC)
30
mA
ID(AV)
average drain current
30
mA
IG1-S
gate 1 source
±10
mA
IG1-S
gate 2 source
±10
mA
Ptot
total power dissipation
up to Tamb =60 °C; note 1
200
mW
Tstg
storage temperature range
65
+150
°C
Tj
junction temperature
150
°C
Fig.2 Power derating curve.
handbook, halfpage
0
200
0
100
200
MGE792
100
Tamb (°C)
Ptot
(mW)
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
× 10 × 0.7 mm.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
460
K/W
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