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參數(shù)資料
| 型號： | 933754980215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 933754980215 |
April 1991
2
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF996S
FEATURES
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
RF applications such as:
– UHF television tuners
– Professional communication equipment.
PINNING
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
Marking code: MHp.
handbook, halfpage
s,b
d
g
1
g
2
43
2
1
Top view
MAM039
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage
20
V
ID
drain current
30
mA
Ptot
total power dissipation
up to Tamb =60 °C
200
mW
Tj
junction temperature
150
°C
transfer admittance
f = 1 kHz; ID = 10 mA; VDS =15V; VG2S =4V
18
mS
Cig-1s
input capacitance at gate 1 f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2S = 4 V 2.3
2.6
pF
Crs
feedback capacitance
f = 1 MHz; ID = 10 mA; VDS = 15 V; VG2S =4V 25
fF
F
noise gure
f = 200 MHz GS = 2 mS; BS =BSopt;
ID = 10 mA; VDS =15V; VGS2 =4V
1
dB
Y
fs
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