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參數(shù)資料
| 型號： | 933750250215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 933750250215 |
September1995
3
Philips Semiconductors
Product specication
NPN 3 GHz wideband transistor
BFS17A
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
dB.
2. dim = 60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL =75 ; Tamb =25 °C;
Vp =VO; fp = 795.25 MHz;
Vq =VO 6 dB; fq = 803.25 MHz;
Vr =VO 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts =70 °C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =10V
50
nA
hFE
DC current gain
IC = 2 mA; VCE =1V; Tamb =25 °C25
90
IC = 25 mA; VCE =1V; Tamb =25 °C25
90
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz;
Tamb =25 °C
2.8
GHz
Cc
collector capacitance
IE = 0; VCB = 10 V; f = 1 MHz;
Tamb =25 °C
0.7
pF
Ce
emitter capacitance
IC = 0; VEB = 0.5 V; f = 1 MHz
1.25
pF
Cre
feedback capacitance
IC = 0; VCE =5V; f=1MHz
0.6
pF
GUM
maximum unilateral power gain
note 1
IC = 14 mA; VCE = 10 V; f = 800 MHz
13.5
dB
F
noise gure
IC = 2 mA; VCE =5V; ZS =60 ;
f = 800 MHz; Tamb =25 °C
2.5
dB
VO
output voltage
note 2
150
mV
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
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