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參數(shù)資料
| 型號： | 933750250215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 933750250215 |
September1995
2
Philips Semiconductors
Product specication
NPN 3 GHz wideband transistor
BFS17A
DESCRIPTION
NPN transistor in a plastic SOT23 package.
APPLICATIONS
It is intended for RF applications such as oscillators
in TV tuners.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
Marking code: E2p.
handbook, halfpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note to the Quick reference data and the Limiting values
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
25
mA
Ptot
total power dissipation
up to Ts =70 °C; note 1
300
mW
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz;
Tamb =25 °C
2.8
GHz
GUM
maximum unilateral power gain
IC = 14 mA; VCE = 10 V; f = 800 MHz
13.5
dB
F
noise gure
IC = 2 mA; VCE = 5 V; f = 800 MHz;
Tamb =25 °C
2.5
dB
VO
output voltage
dim = 60 dB; IC = 14 mA; VCE =10V;
RL =75 ; Tamb =25 °C;
f(p+qr) = 793.25 MHz
150
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
25
mA
ICM
peak collector current
50
mA
Ptot
total power dissipation
up to Ts =70 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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