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參數(shù)資料
| 型號(hào)： | 933732960215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 933732960215 |
December 1997
3
Philips Semiconductors
Product specication
MOSFET N-channel depletion switching transistor
BSD22
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Device mounted on a ceramic subtrate of 8 mm
× 10 mm × 0.7 mm.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied
Drain-source voltage
VDS
max.
20
V
Source-drain voltage
VSD
max.
20
V
Drain-substrate voltage
VDB
max.
25
V
Source-substrate voltage
VSB
max.
25
V
Gate-substrate voltage
VGB
max.
± 15
V
Gate-source voltage
VGS
max.
+ 15
V
40
V
Drain current (DC)
ID
max.
50
mA
Total power dissipation up to Tamb =25 °C(1)
Ptot
max.
230
mW
Storage temperature range
Tstg
65 to + 150
°C
Junction temperature
Tj
max.
125
°C
From junction to ambient in free air(1)
Rth j-a
=
430
K/W
Drain-source breakdown voltage
VGS =VBS = 5 V; IS = 10 nA
V(BR)DSX
min.
20
V
Source-drain breakdown voltage
VGD =VBD = 5 V; ID = 10 nA
V(BR)SDX
min.
20
V
Drain-substrate breakdown voltage
VGB = 0; ID = 10 nA; open source
V(BR)DBO
min.
25
V
Source-substrate breakdown voltage
VGB = 0; IS = 10 nA; open drain
V(BR)SBO
min.
25
V
Drain-source leakage current
VGS =VBS = 5 V; VDS = 10 V
IDSoff
typ.
1.0
nA
Source-drain leakage current
VGD =VBD = 5 V; VSD = 10 V
ISDoff
typ.
1.0
nA
Gate-substrate leakage current
VDB =VSB = 0; VGB = ± 15 V
IGBS
max.
10
nA
Forward transconductance at f = 1 kHz
VDS = 10 V; VSB = 0; ID = 20 mA
gfs
min.
10
mS
typ.
15
mS
Gate-source cut-off voltage
VDS = 10 V; VSB =0;
ID =10 A
V(P)GS
max.
2.0
V
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