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參數(shù)資料
| 型號(hào)： | 933732960215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 933732960215 |
December 1997
2
Philips Semiconductors
Product specication
MOSFET N-channel depletion switching transistor
BSD22
DESCRIPTION
Symmetrical insulated-gate silicon
MOS field-effect transistor of the
n-channel depletion mode type.The
transistor is sealed in a SOT143
envelope and features a low
ON-resistance and low
capacitances.The transistor is
protected against excessive input
voltages by integrated back-to-back
diodes between gate and substrate.
Applications:
analog and/or digital switch
switch driver
convertor
chopper
PINNING
Note
1. Drain and source are
interchangeable
1
= substrate (b)
2
= source
3
= drain
4
= gate
Marking code: M32
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM389
Top view
g
d
b
s
2
1
3
4
QUICK REFERENCE DATA
Drain-source voltage
VDS
max.
20
V
Gate-source voltage
VGS
max.
+ 15
V
40
V
Drain current (DC)
ID
max.
50
mA
Total power dissipation up to Tamb =25 °CPtot
max.
230
mW
Junction temperature
Tj
max.
125
°C
Drain-source ON-resistance
VGS = 10 V; VSB = 0; ID = 1 mA
RDSon
max.
30
Feed-back capacitance
VGS =VBS = 5 V; VDS = 10 V; f = 1 MHz
Crss
typ.
0.6
pF
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