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參數(shù)資料
| 型號： | 933684200114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, MEATL CERAMIC, FM-2 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 127K |
| 代理商： | 933684200114 |
1997 Nov 13
4
Philips Semiconductors
Product specication
NPN microwave power transistor
PZ1418B30U
THERMAL CHARACTERISTICS
Note
1. See “
Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C in a common base class B wideband amplier.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
Tj =75 °C
2.2
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
Tj =75 °C; note 1
0.2
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
ICBO
collector cut-off current
VCB =40V; IE = 0
10
mA
VCB =30V; IE =0
5
mA
ICES
collector cut-off current
VCE =35V; RBE = 0
50
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
200
A
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(
)
1.4 to 1.8
28
≥27
typ. 35
≥7.3
typ. 8.4
≥38
typ. 45
see Figs 6 and 7
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation.
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity:
ε
r = 10.
handbook, full pagewidth
MGK064
input
50
100 pF
(ATC)
,,
,,,,,
4
5
2
5.5
2
0.65
6.5
8.5
0.65
12
21
4
output
50
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