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參數(shù)資料
| 型號(hào)： | 933684200114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, MEATL CERAMIC, FM-2 |
| 文件頁(yè)數(shù)： | 7/14頁(yè) |
| 文件大小： | 127K |
| 代理商： | 933684200114 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)當(dāng)前第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
1997 Nov 13
2
Philips Semiconductors
Product specication
NPN microwave power transistor
PZ1418B30U
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Internal input and output prematching ensures good
stability and easy broadband use.
APPLICATIONS
Common base class-B broadband amplifiers under CW
conditions in military and professional applications.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN
DESCRIPTION
1
collector
2
emitter
3
base; connected to ange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
RF performance up to Tmb =25 °C in a common base class-B wideband amplier.
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(
)
1.4 to 1.8
28
≥27
≥7.3
≥38
see Figs 6 and 7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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相關(guān)代理商/技術(shù)參數(shù) |
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