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參數(shù)資料
| 型號(hào)： | 933677740215 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | 933677740215 |
1998 Aug 27
3
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistor
BFQ67
THERMAL CHARACTERISTICS
Note
1.
Ts is the temperature at the soldering point of the collector lead.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =5V
50
nA
hFE
DC current gain
IC = 15 mA; VCE = 5 V
60
100
Cc
collector capacitance
IE =ie = 0; VCB = 8 V; f = 1 MHz
0.7
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1.3
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.5
pF
fT
transition frequency
IC = 15 mA; VCE =8V
8
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
14
dB
IC = 15 mA; VCE =8V; f=2GHz
8
dB
F
noise gure
Γ
s = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
1.3
dB
Γ
s = Γopt; IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
1.7
dB
Γs = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
2.2
dB
IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz; Zs =60
2.5
dB
Γ
s = Γopt; IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
2.7
dB
IC = 15 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz; Zs =60
3
dB
G
UM
10 log
S
21
2
1
S
11
2
–
1
S
22
2
–
-------------------------------------------------------------- dB
=
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