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參數(shù)資料
| 型號： | 933677740215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 933677740215 |
1998 Aug 27
2
Philips Semiconductors
Product specication
NPN 8 GHz wideband transistor
BFQ67
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Satellite TV tuners and RF portable
communications equipment up to
2 GHz.
DESCRIPTION
Silicon NPN wideband transistor in a
plastic SOT23 package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
alfpage
MSB003
Top view
12
3
Marking code: V2p.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
IC
collector current (DC)
50
mA
Ptot
total power dissipation
Ts ≤ 97 °C; note 1
300
mW
hFE
DC current gain
IC = 15 mA; VCE = 5 V
60
100
fT
transition frequency
IC = 15 mA; VCE =8V
8
GHz
GUM
maximum unilateral
power gain
IC = 15 mA; VCE = 8 V; f = 1 GHz
14
dB
F
noise gure
IC = 5 mA; VCE = 8 V; f = 1 GHz
1.3
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current (DC)
50
mA
Ptot
total power dissipation
Ts ≤ 97 °C; note 1
300
mW
Tstg
storage temperature range
65
+150
°C
Tj
junction temperature
175
°C
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