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參數(shù)資料
| 型號： | 933608850112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 92K |
| 代理商： | 933608850112 |
September 1995
4
Philips Semiconductors
Product specication
NPN 4 GHz wideband transistor
BFQ34
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Notes
1. Measured with grounded emitter and base.
2. GUM is the maximum unilateral power gain, assuming S12 is zero and
3. dim = 60 dB (DIN 45004B, par. 6.3.: 3-tone); IC = 120 mA; VCE = 15 V; RL = 75 ; Tamb = 25 °C;
Vp = VO at dim = 60 dB; fp = 795.25 MHz;
Vq = VO 6 dB; fq = 803.25 MHz;
Vr = VO 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
4. IC = 120 mA; VCE = 15 V; Tamb = 25 °C; RL = 75 ;
measured at f = 800 MHz.
5. IC = 120 mA; VCE = 15 V; RL = 75 ;Tamb = 25 °C;
Pp = ITO 6 dB; fp = 800 MHz;
Pq = ITO 6 dB; fq = 801 MHz;
measured at f(2qp) = 802 MHz and at f(2pq) = 799 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 15 V
100
A
hFE
DC current gain
IC = 75 mA; VCE = 15 V
25
70
IC = 150 mA; VCE = 15 V
25
70
fT
transition frequency
IC = 75 mA; VCE = 15 V; f = 500 MHz 3
3.5
GHz
IC = 150 mA; VCE = 15 V;
f = 500 MHz
3.5
4
GHz
Cc
collector capacitance
IE = 0; VCB = 15 V; f = 1 MHz
2
2.75
pF
Ce
emitter capacitance
IC = 0; VEB = 0.5 V; f = 1 MHz
11
pF
Cre
feedback capacitance
IC = 10 mA; VCE = 15 V; f = 1 MHz;
Tamb =25 °C
1
1.35
pF
Cc-s
collector-stud capacitance
note 1
0.8
pF
F
noise gure (see Fig.2)
IC = 120 mA; VCE = 15 V;
f = 500 MHz; Tamb =25 °C
8
dB
GUM
maximum unilateral power gain
(note 2)
IC = 120 mA; VCE = 15 V;
f = 500 MHz; Tamb =25 °C
16.3
dB
Vo
output voltage
Figs 2 and 7 and note 3
1.2
V
PL1
output power at 1 dB gain
compression (see Fig.2)
note 4
26
dBm
ITO
third order intercept point (see Fig.2)
note 5
45
dBm
G
UM
10
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
log
=
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