參數(shù)資料
型號(hào)： 933608850112
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 92K
代理商： 933608850112
September 1995
2
Philips Semiconductors
Product specication
NPN 4 GHz wideband transistor
BFQ34
DESCRIPTION
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
PINNING
PIN
DESCRIPTION
Code: BFQ34/01
1
collector
2
emitter
3
base
4
emitter
Fig.1 SOT122A.
lfpage
Top view
MBK187
3
1
2
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
18
V
IC
collector current
150
mA
Ptot
total power dissipation
up to Tc = 160 °C
2.7
W
fT
transition frequency
IC = 150 mA; VCE = 15 V; f = 500 MHz 4
GHz
Vo
output voltage
IC = 120 mA; VCE = 15 V; RL =75 ;
Tamb = 25 °C; dim = 60 dB
f(p+q-r) = 793.25 MHz
1.2
V
PL1
output power at 1 dB gain
compression
IC = 120 mA; VCE = 15 V; RL =75 ;
f = 800 MHz; Tamb = 25 °C
26
dBm
ITO
third order intercept point
IC = 120 mA; VCE = 15 V; RL =75 ;
Tamb = 25 °C
45
dBm
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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