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參數(shù)資料
| 型號(hào)： | 933448550112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 80K |
| 代理商： | 933448550112 |
August 1986
9
Philips Semiconductors
Product specication
UHF linear power transistor
BLW34
Fig.10 Bias circuit for class-A linear amplifier at
fvision = 860 MHz.
+Vs
+VCC
+VBB
0
R9
R8
R7
TR1
C3
R5
R4
C2
C1
R3
R2
D1
R1
D2
C4
R6
MGP437
List of components:
C1 = 100 pF ceramic capacitor
C2 = C3 = 100 nF polyester capacitor
C4 = 10
F/25 V solid aluminium electrolytic capacitor
R1 = 150
carbon resistor (0,25 W)
R2 = 100
preset potentiometer (0,1 W)
R3 = 82
carbon resistor (0,25 W)
R4 = R5 = 2,2 k
carbon resistor (0,25 W)
R6 = 2,8
; parallel connection of
2
× 5,6 carbon resistors (0,5 W each)
R7 = R8 = 820
carbon resistor (0,25 W)
R9 = 33
carbon resistor (0,25 W)
D1
= BZY88-C3V3
D2
= BY206
TR1
= BD136
Information for wideband application from 470 to 860 MHz available on request.
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak sync level.
Intermodulation distortion of input signal
≤75 dB.
2. Two-tone test method (vision carrier 0 dB, sound carrier
7 dB), zero dB corresponds to peak sync level.
Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from
0 dB to
20 dB.
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power.
Typical values; VCE = 25 V; IC = 600 mA; fvision = 860 MHz; Th =25 °C; Th =70 °C.
handbook, full pagewidth
6
50
70
02
MGP462
60
20
0
10
4
Po sync (W)
dim
(dB)
dcm
(%)
dcm
dim
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