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參數(shù)資料
| 型號(hào)： | 933448550112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | 933448550112 |
August 1986
7
Philips Semiconductors
Product specication
UHF linear power transistor
BLW34
APPLICATION INFORMATION
Note
1. Three-tone test method (vision carrier
8 dB, sound carrier 7 dB, sideband signal 16 dB), zero dB corresponds to
peak sync level.
List of components:
fvision (MHz)
VCE (V)
IC (mA)
Th (°C)
dim (dB) (1)
Po sync (W) (1)
Gp (dB)
860
25
600
70
60
>
1,8
>
9
860
25
600
70
60
typ.
1,9
typ.
10,2
860
25
600
25
60
typ.
2,15
typ.
10,2
C1 = C5 = 1,8 to 10 pF lm dielectric trimmer (cat. no. 2222 809 05002)
C2 = C6 = 1 to 3,5 pF lm dielectric trimmer (cat. no. 2222 809 05001) placed 13,5 mm and 46 mm
respectively from transistor edge
C3 = C4 = 2 pF multilayer ceramic chip capacitor (ATC 100A-2RO-C-PX-50)
C7 = C10 = 1 nF chip capacitor
C8 = 100 nF polyester capacitor
C9 = C12 = 470 nF polyester capacitor
C11 = 10 nF polyester capacitor
C13 = 3,3
F/40 V solid aluminium electrolytic capacitor
L1 = stripline (9,2 mm
× 7,0 mm)
L2 = stripline (14,2 mm
× 7,0 mm)
L3 = micro choke 0,47
H (cat. no. 4322 057 04770)
L4 = stripline (see Fig.9 printed-circuit board layout)
L5 = 34 mm straight Cu wire (1,0 mm); height above print 3,3 mm
L6 = stripline (41,0 mm
× 7,0 mm)
L7 = stripline (8,7 mm
× 7,0 mm)
L1; L2; L4; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE bre-glass dielectric
(
ε
r = 2,74); thickness 1/16".
Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10.
Fig.8 Test circuit at fvision = 860 MHz.
handbook, full pagewidth
MGP460
+VBB
+VCC
50
L1
L2
T.U.T.
C1
C3
L3
L5
C7
C8
C9
C10
C11
C12
C13
C4
C6
C2
L7
C5
L6
L4
50
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