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| 型號(hào)： | 933334180133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, SC-40, 2 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 39K |
| 代理商： | 933334180133 |
1996 Sep 17
6
Philips Semiconductors
Product specication
Controlled avalanche diode
BAX12
Fig.8
Reverse current as a function of continuous
reverse voltage.
handbook, halfpage
100
200
600
0
200
400
MBG698
150
(1)
(4)
IR
(mA)
VR (V)
(2)
(3)
Reverse voltages higher than the VR ratings are allowed, provided:
a. The transient energy
≤ 7.5 mJ at PRRM ≤30 W; Tj =25 °C;
the transient energy
≤ 5 mJ at PRRM = 120 W; Tj =25 °C (see Fig.7).
b. T
≥ 50 ms; δ≤0.01 (rectangular waveform) (see Fig.9).
δ≤0.02 (triangular waveform) (see Fig.9).
With increasing temperature, the maximum permissible transient
energy must be decreased by 0.03 mJ/K.
(1) Tj =25 °C; minimum values.
(2) Tj = 175 °C; minimum values.
(3) Tj =25 °C; maximum values.
(4) Tj = 175 °C; maximum values.
Fig.9
Peak reverse voltage and current test
pulses.
handbook, halfpage
MBG699
VR
IR
T
time
t (rectangular waveform)
t
(triangular
waveform)
δ =
t
T
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