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參數(shù)資料
| 型號： | 933334180133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.4 A, 90 V, SILICON, SIGNAL DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, SC-40, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 933334180133 |
1996 Sep 17
2
Philips Semiconductors
Product specication
Controlled avalanche diode
BAX12
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
Switching speed: max. 50 ns
General application
Continuous reverse voltage:
max. 90 V
Repetitive peak reverse voltage:
max. 90 V
Repetitive peak forward current:
max. 800 mA
Repetitive peak reverse current:
max. 600 mA
Capable of absorbing transients
repetitively.
APPLICATIONS
Switching of inductive loads in
semi-electronic telephone
exchanges.
DESCRIPTION
The BAX12 is a controlled avalanche diode fabricated in planar technology, and
encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)
package.
Fig.1 Simplified outline (SOD27; DO35) and symbol.
Marking code: BAX12.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating.
2. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
note 1
90
V
VR
continuous reverse voltage
note 1
90
V
IF
continuous forward current
see Fig.2; note 2
400
mA
IFRM
repetitive peak forward current
800
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
55
A
t = 100
s
15
A
t = 10 ms
9A
Ptot
total power dissipation
Tamb =25 °C; note 2
450
mW
IRRM
repetitive peak reverse current
600
mA
ERRM
repetitive peak reverse energy
tp ≥ 50 s; f ≤ 20 Hz; Tj =25 °C
5.0
mJ
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
200
°C
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