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參數(shù)資料
| 型號： | 933330390215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 41K |
| 代理商： | 933330390215 |
1999 Apr 15
3
Philips Semiconductors
Product specication
PNP high-voltage transistor
BSS63
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 90 V
100 nA
IE = 0; VCB = 90 V; Tj = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB = 6V
100 nA
hFE
DC current gain
IC = 10 mA; VCE = 1V
30
IC = 25 mA; VCE = 1V
30
VCEsat
collector-emitter saturation voltage
IC = 25 mA; IB = 2.5 mA
250 mV
VBEsat
base-emitter saturation voltage
IC = 25 mA; IB = 2.5 mA
900 mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
3
pF
fT
transition frequency
IC = 25 mA; VCE = 5V;
f = 100 MHz
50
85
MHz
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