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參數(shù)資料
| 型號(hào)： | 933330390215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 41K |
| 代理商： | 933330390215 |
1999 Apr 15
2
Philips Semiconductors
Product specication
PNP high-voltage transistor
BSS63
FEATURES
Low current (max. 100 mA)
High voltage (max. 100 V).
APPLICATIONS
High-voltage general purpose
Switching applications.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: BSS64.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BSS63
BM
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
110
V
VCEO
collector-emitter voltage
open base
100
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
100
mA
ICM
peak collector current
100
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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