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參數(shù)資料
| 型號(hào)： | 933330380115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, UPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 933330380115 |
September 1995
3
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFQ19
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 145 °C (note 1)
30 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
100
nA
hFE
DC current gain
IC = 70 mA; VCE = 10 V
25
80
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
1.6
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
5
pF
Cre
feedback capacitance
IC = 10 mA; VCE = 10 V; f = 1 MHz;
Tamb =25 °C
1.3
pF
fT
transition frequency
IC = 70 mA; VCE = 10 V; f = 500 MHz
4.4
5.5
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 50 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
11.5
dB
IC = 50 mA; VCE = 10 V;
f = 800 MHz; Tamb =25 °C
7.5
dB
F
noise gure
IC = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb =25 °C
3.3
dB
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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