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參數(shù)資料
| 型號： | 933330380115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, UPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 933330380115 |
September 1995
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFQ19
DESCRIPTION
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for use in UHF and
microwave amplifiers such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers
etc.
The transistor features very low
intermodulation distortion and high
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PINNING
PIN
DESCRIPTION
Code: FB
1
emitter
2
collector
3
base
Fig.1 SOT89.
page
12
3
Bottom view
MBK514
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
1W
fT
transition frequency
Ic = 50 mA; VCE = 10 V; f = 500 MHz;
Tj =25 °C
5.5
GHz
Cre
feedback capacitance
Ic = 10 mA; VCE = 10 V; f = 1 MHz;
Tamb =25 °C
1.3
pF
F
noise gure
Ic = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb =25 °C
3.3
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
3.3
V
IC
DC collector current
100
mA
ICM
peak collector current
f
> 1 MHz
150
mA
Ptot
total power dissipation
up to Ts = 145 °C (note 1)
1W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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