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參數(shù)資料
| 型號(hào)： | 933222700215 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | 933222700215 |
November 1992
3
Philips Semiconductors
Product specication
NPN 2 GHz wideband transistor
BFT25
THERMAL RESISTANCE
Note
1. Ts = is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 167°C; note 1
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 5 V
50
nA
hFE
DC current gain
IC = 10 A; VCE = 1 V
20
30
IC = 1 mA; VCE = 1 V
20
40
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 500 MHz
1.2
2.3
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 0.5 V; f = 1 MHz
0.6
pF
Ce
emitter capacitance
Ic =ic =0;VEB = 0; f = 1 MHz
0.5
pF
Cre
feedback capacitance
IC = 1 mA; VCE = 1 V; f = 1 MHz;
Tamb =25 °C
0.45
pF
GUM
maximum unilateral power gain
(note 1)
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb =25 °C
18
dB
IC = 1 mA; VCE = 1 V; f = 800 MHz;
Tamb =25 °C
12
dB
F
noise gure
IC = 0.1 mA; VCE =1V;
f = 500 MHz; Tamb =25 °C
5.5
dB
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb =25 °C
3.8
dB
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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