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參數(shù)資料
| 型號： | 933222700215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 933222700215 |
November 1992
2
Philips Semiconductors
Product specication
NPN 2 GHz wideband transistor
BFT25
DESCRIPTION
NPN transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
low power amplifiers, such as in
pocket phones, paging systems, etc.
The transistor features low current
consumption (100
A to 1 mA); due to
its high transition frequency, it also
has excellent wideband properties
and low noise up to high frequencies.
PINNING
PIN
DESCRIPTION
Code: V1p
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
8V
VCEO
collector-emitter voltage
open base
5V
Ic
DC collector current
6.5
mA
Ptot
total power dissipation
up to Ts = 167 °C; note 1
30
mW
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb =25 °C
2.3
GHz
Cre
feedback capacitance
IC = 1 mA; VCE = 1 V; f = 1 MHz;
Tamb =25 °C
0.45
pF
GUM
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb =25 °C
18
dB
F
noise gure
IC = 1 mA; VCE = 1 V; f = 500 MHz;
Tamb =25 °C
3.8
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
8V
VCEO
collector-emitter voltage
open base
5V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
6.5
mA
ICM
peak collector current
f
> 1 MHz
10
mA
Ptot
total power dissipation
up to Ts = 167 °C; note 1
30
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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