參數(shù)資料
型號(hào)： 933188170215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST, 3 PIN
文件頁數(shù)： 4/10頁
文件大小： 76K
代理商： 933188170215
September 1995
3
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR92
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. Crystal mounted in a SOT37 envelope (BFR90).
3. dim = 60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL =75 ; Tamb =25 °C;
Vp =Vo at dim = 60 dB; fp = 495.25 MHz;
Vq =Vo 6 dB; fq = 503.25 MHz;
Vr =Vo 6 dB; fr = 505.25 MHz;
measured at f(p+qr) = 493.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts =95 °C; note 1
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
50
nA
hFE
DC current gain
IC = 14 mA; VCE = 10 V
40
90
fT
transition frequency
IC = 14 mA; VCE = 10 V; f = 500 MHz
5
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
0.75
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
0.8
pF
Cre
feedback capacitance
IC = 2 mA; VCE = 10 V; f = 1 MHz;
Tamb =25 °C
0.4
pF
GUM
maximum unilateral power gain
(note 1)
IC = 14 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
18
dB
F
noise gure (see Fig.2 and note 2) IC = 2 mA; VCE = 10 V; f = 500 MHz;
Tamb =25 °C; Zs = opt.
2.4
dB
Vo
output voltage
note 3
150
mV
G
UM
10 log
S
21
2
1
S
11
2
–
1
S
22
2
–
--------------------------------------------------------------
dB˙
=
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933188180215 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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