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參數(shù)資料
| 型號(hào)： | 933188170215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 76K |
| 代理商： | 933188170215 |
September 1995
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR92
DESCRIPTION
NPN transistor in a plastic SOT23
envelope primarily intended for use in
RF wideband amplifiers and
oscillators. The transistor features
low intermodulation distortion and
high power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PNP complement is BFT92.
PINNING
PIN
DESCRIPTION
Code: P1p
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
25
mA
Ptot
total power dissipation
up to Ts =95 °C; note 1
300
mW
fT
transition frequency
IC = 14 mA; VCE = 10 V; f = 500 MHz;
Tj =25 °C
5
GHz
Cre
feedback capacitance
IC = 2 mA; VCE = 10 V; f = 1 MHz
0.4
pF
GUM
maximum unilateral power gain
IC = 14 mA; VCE = 10 V; f = 500 MHz;
Tamb =25 °C
18
dB
F
noise gure
IC = 2 mA; VCE = 10 V; f = 500 MHz;
Tamb =25 °C; Zs = opt.
2.4
dB
Vo
output voltage
dim = 60 dB; IC = 14 mA; VCE = 10 V;
RL =75 ; Tamb =25 °C;
f(p+qr) = 493.25 MHz
150
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
25
mA
Ptot
total power dissipation
up to Ts =95 °C; note 1
300
mW
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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