參數(shù)資料
型號: 933076440163
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 4/7頁
文件大小: 46K
代理商: 933076440163
1996 Jun 19
4
Philips Semiconductors
Product specication
Controlled avalanche rectiers
1N5059 to 1N5062
GRAPHICAL DATA
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
a = 1.57; VR =VRRMmax; δ = 0.5.
Lead length 10 mm.
handbook, halfpage
3
2
1
0
MBG044
0
40
200
80
120
160
Ttp (°C)
IF(AV)
(A)
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
a = 1.57; VR =VRRMmax; δ = 0.5.
Device mounted as shown in Fig.9.
handbook, halfpage
0
IF(AV)
(A)
40
200
1.6
1.2
0.4
0
0.8
80
120
160
Tamb (°C)
MBG054
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
a=IF(RMS)/IF(AV); VR =VRRMmax; δ = 0.5.
handbook, halfpage
01
23
4
3
1
0
2
MGC745
2
P
(W)
I
F(AV)
(A)
1.42
2.5
a = 3
1.57
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
1200
0
MBH388
100
200
800
400
VR (V)
Tj
(
°C)
60
61
59
62
相關(guān)PDF資料
PDF描述
933083990133 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
933083990136 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
933120350116 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
933120350113 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
933083990113 0.2 A, 75 V, SILICON, SIGNAL DIODE, DO-35
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