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參數(shù)資料
| 型號(hào)： | 933076440163 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 933076440163 |
1996 Jun 19
2
Philips Semiconductors
Product specication
Controlled avalanche rectiers
1N5059 to 1N5062
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
1N5059
200
V
1N5060
400
V
1N5061
600
V
1N5062
800
V
VRWM
crest working reverse voltage
1N5059
200
V
1N5060
400
V
1N5061
600
V
1N5062
800
V
VR
continuous reverse voltage
1N5059
200
V
1N5060
400
V
1N5061
600
V
1N5062
800
V
IF(AV)
average forward current
Ttp =45 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
2.0
A
Tamb =80 °C; PCB mounting
(see Fig.9); averaged over any
20 ms period; see Figs 3 and 4
0.8
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave
50
A
ERSM
non-repetitive peak reverse avalanche
energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.5
65
+175
°C
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