參數(shù)資料
型號(hào): 90S1200
廠商: Atmel Corp.
元件分類: 8位微控制器
英文描述: -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
中文描述: 位AVR微控制器具有8K字節(jié)的系統(tǒng)內(nèi)可編程閃存
文件頁數(shù): 39/71頁
文件大?。?/td> 1416K
代理商: 90S1200
39
AT90S1200
0838H
AVR
03/02
Table 15.
XA1 and XA0 Coding
Enter Programming Mode
The following algorithm puts the device in Parallel Programming mode:
1.
Apply supply voltage according to Table 13, between V
CC
and GND.
2.
Set the RESET and BS pin to
0
and wait at least 100 ns.
3.
Apply 11.5 - 12.5V to RESET. Any activity on BS within 100 ns after +12V has
been applied to RESET, will cause the device to fail entering Programming
mode.
Chip Erase
The Chip Erase command will erase the Flash and EEPROM memories, and the Lock
bits. The Lock bits are not Reset until the Flash and EEPROM have been completely
erased. The Fuse bits are not changed. Chip Erase must be performed before the Flash
or EEPROM is reprogrammed.
Load Command
Chip Erase
1.
Set XA1, XA0 to
10
. This enables command loading.
2.
Set BS to
0
.
3.
Set DATA to
1000 0000
. This is the command for Chip Erase.
4.
Give XTAL1 a positive pulse. This loads the command.
5.
Give WR a
t
WLWH_CE
wide negative pulse to execute Chip Erase,
t
WLWH_CE
is found
in Table 17. Chip Erase does not generate any activity on the RDY/BSY pin.
Programming the Flash
A: Load Command
Write Flash
1.
Set XA1, XA0 to
10
. This enables command loading.
2.
Set BS to
0
.
3.
Set DATA to
0001 0000
. This is the command for Write Flash.
XA1
XA0
Action when XTAL1 is Pulsed
0
0
Load Flash or EEPROM Address (High or low address byte for Flash
determined by BS).
0
1
Load Data (High or low data byte for Flash determined by BS).
1
0
Load Command
1
1
No Action, Idle
Table 16.
Command Byte Coding
Command Byte
Command Executed
1000 0000
Chip Erase
0100 0000
Write Fuse Bits
0010 0000
Write Lock Bits
0001 0000
Write Flash
0001 0001
Write EEPROM
0000 1000
Read Signature Bytes
0000 0100
Read Fuse and Lock Bits
0000 0010
Read Flash
0000 0011
Read EEPROM
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