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參數(shù)資料
| 型號(hào)： | 7MBR35SD120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | PIM/Built-in converter with thyristor and brake (S series) 1200V / 35A / PIM |
| 中文描述： | 50 A, 1200 V, N-CHANNEL IGBT |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 429K |
| 代理商： | 7MBR35SD120 |
IGBT Module
7MBR35SD120
Electrical characteristics (Tj=25°C unless otherwise specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
V
CE(sat)
V
GE
=15V, Ic=35A chip
terminal
V
GE
=0V, V
CE
=10V, f=1MHz
V
CC
=600V
I
C
=35A
V
GE
=±15V
R
G
=33
I
F
=35A chip
terminal
I
F
=35A
V
CES
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
I
C
=25A, V
GE
=15V chip
terminal
V
CC
=600V
I
C
=25A
V
GE
=±15V
R
G
=51
V
R
=1200V
V
DM
=1600V
V
RM
=1600V
V
D
=6V, I
T
=1A
V
D
=6V, I
T
=1A
I
TM
=35A chip
terminal
I
F
=35A chip
terminal
V
R
=1600V
T=25°C
T=100°C
T=25/50°C
Input capacitance
Turn-on time
Turn-off
Forward on voltage
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
Collector-Emitter saturation voltage
Turn-on time
Turn-off time
Reverse current
off-state current
Reverse current
Gate trigger current
Gate trigger voltage
On-state voltage
Forward on voltage
Reverse current
Resistance
B value
T
I
CES
I
GES
V
GE(th)
C
ies
t
on
t
r
t
off
t
f
V
F
t
rr
I
CES
I
GES
V
CE(sat)
t
on
t
r
t
off
t
f
I
RRM
I
DM
I
RRM
I
GT
V
GT
V
TM
V
FM
I
RRM
R
B
V
CE
=1200V, V
GE
=0V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=35mA
200
200
8.5
2.7
1.2
0.6
1.0
0.3
3.3
350
200
200
2.7
1.2
0.6
1.0
0.3
200
1.0
1.0
100
2.5
1.2
1.5
200
4200
5.5 7.2
μA
nA
V
V
pF
μs
V
ns
μA
nA
V
μs
μA
mA
mA
mA
V
V
V
μA
K
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT
Inverter FWD
Brake IGBT
Thyristor
Converter Diode
With thermal compound
Contact thermal resistance * Rth(c-f)
0.52
0.90
0.69
1.00 °C/W
0.75
0.05
Thermal resistance ( 1 device ) Rth(j-c)
Thermal resistance Characteristics
* This is the value which is defined mounting on the additional cooling fin with thermal compound
2.1
2.25
0.35
0.25
0.45
0.08
2.3
2.45
2.1
2.25
0.35
0.25
0.45
0.08
1.1
1.2
1.1
1.2
5000
465 495 520
3305 3375 3450
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 7MBR35UA120 | IGBT MODULE (U series) 1200V / 35A / PIM |
| 7MBR50SA-060 | Power Integrated Module (PIM) |
| 7MBR50NF060 | 600V/50A/PIM |
| 7MBR50SA060 | IGBT(600V/50A/PIM) |
| 7MBR50SB060 | IGBT(600V/50A/PIM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7MBR35SD120_04 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:PIM/Built-in converter with thyristor and brake |
| 7MBR35UA120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (U series) 1200V / 35A / PIM |
| 7MBR35UA-120 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBTs |
| 7MBR35UA-120-50 | 制造商:Fuji Electric 功能描述:IGBT 7 PACK MOD 1200V 35A M711 |
| 7MBR35UB120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT MODULE (U series) 1200V / 35A / PIM |
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